Reassessing NBTI mechanisms by ultrafast charge pumping measurement

Author

Ang, D.S. ; Teo, Z.Q. ; Ng, C.M.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

fYear

2009

fDate

18-22 Oct. 2009

Firstpage

25

Lastpage

29

Abstract

We reassess NBTI mechanisms by an UFCP method and show that the abrupt change of Â¿I_cp at stress/recovery transition (and vice versa) is due to a stressed induced oxide trap current. Thus, the current claim of fast generation/recovery of Â¿N_it has to be reviewed. Moreover, stress induced interface traps, Â¿N_it (the component of Â¿I_cp which is independent of pulse width) is permanent, i.e. do not recover. This observation also does not conform to the notion that generation/recovery of Â¿N_it is limited by the transport of hydrogen species.

Keywords

MOSFET; charge measurement; hole traps; NBTI mechanisms; UFCP method; hole trapping; pMOSFET; stress induced interface traps; ultrafast charge pumping measurement; Charge measurement; Charge pumps; Current measurement; Degradation; EPROM; Niobium compounds; Semiconductor device testing; Stress; Threshold voltage; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2009. IRW '09. IEEE International

Conference_Location

S. Lake Tahoe, CA

ISSN

1930-8841

Print_ISBN

978-1-4244-3921-8

Electronic_ISBN

1930-8841

Type

conf

DOI

10.1109/IRWS.2009.5383040

Filename

5383040