Title :
Reassessing NBTI mechanisms by ultrafast charge pumping measurement
Author :
Ang, D.S. ; Teo, Z.Q. ; Ng, C.M.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
We reassess NBTI mechanisms by an UFCP method and show that the abrupt change of ¿Icp at stress/recovery transition (and vice versa) is due to a stressed induced oxide trap current. Thus, the current claim of fast generation/recovery of ¿Nit has to be reviewed. Moreover, stress induced interface traps, ¿Nit (the component of ¿Icp which is independent of pulse width) is permanent, i.e. do not recover. This observation also does not conform to the notion that generation/recovery of ¿Nit is limited by the transport of hydrogen species.
Keywords :
MOSFET; charge measurement; hole traps; NBTI mechanisms; UFCP method; hole trapping; pMOSFET; stress induced interface traps; ultrafast charge pumping measurement; Charge measurement; Charge pumps; Current measurement; Degradation; EPROM; Niobium compounds; Semiconductor device testing; Stress; Threshold voltage; Titanium compounds;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2009. IRW '09. IEEE International
Conference_Location :
S. Lake Tahoe, CA
Print_ISBN :
978-1-4244-3921-8
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2009.5383040