Title :
Electric field dependent switching and degradation of Resistance Random Access Memory
Author :
Hosotani, Keiji ; Park, Seong-Geon ; Nishi, Yoshio
Author_Institution :
on-leave from Toshiba Corp., Stanford, CA, USA
Abstract :
We have developed a novel method and model to describe the switching and degradation phenomena of uni-polar type ReRAM using conventional electric field dependent dielectric breakdown model. By this method, we can clearly describe the relationship between ¿forming¿, ¿set¿, ¿reset¿, and degradation process of TiO2 based ReRAM. In this paper, we will demonstrate our method and discuss the switching and degradation model of uni-polar type ReRAM regarding its future potential for commercialization.
Keywords :
electric breakdown; random-access storage; electric field dependent dielectric breakdown; electric field dependent switching; resistance random access memory degradation; unipolar type ReRAM; Degradation; Dielectric breakdown; Dielectric measurements; Electric resistance; Electrical resistance measurement; Random access memory; Read-write memory; Thermal stresses; Thickness measurement; Voltage; E-model; ReRAM; dielectric breakdown; reliability; uni-polar switching;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2009. IRW '09. IEEE International
Conference_Location :
S. Lake Tahoe, CA
Print_ISBN :
978-1-4244-3921-8
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2009.5383041
