DocumentCode :
3144321
Title :
Foreword
Author :
Guoqiao Tao
fYear :
2009
fDate :
18-22 Oct. 2009
Abstract :
The final report of the 2009 International Integrated Reliability Workshop represents the final product of the many authors and volunteers who made this year´s meeting a great success. Since it began in 1982 as the Wafer Level Reliability Workshop, the meeting has maintained a character very different from most other scientific and technical meetings. Attendees are encouraged and expected to participate actively in every aspect of the Workshop, to share their own results and insights, to question speakers, to take part in the discussion groups and special interest groups. Since it began, the Workshop has maintained an atmosphere which fosters close interaction among attendees in a setting of great natural beauty with minimal distractions.
Keywords :
Abstracts; Atmosphere; Electrostatic discharge; Guidelines; High-K gate dielectrics; Maintenance; Meetings; Monitoring; Niobium compounds; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2009. IRW '09. IEEE International
Conference_Location :
South Lake Tahoe, CA, USA
ISSN :
1930-8841
Print_ISBN :
978-1-4244-3921-8
Electronic_ISBN :
1930-8841
Type :
conf
DOI :
10.1109/IRWS.2009.5383046
Filename :
5383046
Link To Document :
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