Title :
The combined photovoltaic converters based on gallium arsenide for space application
Author :
Kagan, M. ; Letin, V. ; Nuller, T.
Author_Institution :
State Res.-Production Enterprise, Moscow, Russia
Abstract :
This paper presents results of the development as well as calculation and experimental analysis of several modifications of combined solar cells with highly efficient GaAs-based solar cell (h=18,5% at AMO, T=25°C) in the system Ga1-xAlxAs-pGaAs-nGaAs. This development was aimed to the generation of maximum power density when such solar cells are used on space vehicles. The next modifications of combined solar cells are presented: a symmetrical GaAlAs-GaAs cell based on p-n-p structure with two-face sensibility; a symmetrical-cascade cell in the GaAs-Si system; a symmetrical-cascade GaAs-Si-GaAs cell. As a result, the specific power of 48.5-58 mwt/cm2 at AMO, 25°C has been demonstrated in an experiment in a design with two-face lighting
Keywords :
III-V semiconductors; aerospace testing; gallium arsenide; photovoltaic power systems; semiconductor device models; semiconductor device testing; solar cells; space vehicle power plants; GaAlAs-GaAs; GaAlAs-GaAs-GaAs; GaAs; GaAs-Si; GaAs-Si-GaAs; GaAs-based solar cells; combined photovoltaic converters; development; maximum power density; semiconductor; space power solar cells; space vehicles; specific power; symmetrical-cascade cell; two-face lighting; two-face sensibility; Contact resistance; Equations; Gallium arsenide; Integrated circuit interconnections; Photoconductivity; Photovoltaic cells; Photovoltaic systems; Solar power generation; Surface resistance; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.563964
