Title :
CVD photoresist processes for sub-0.18 design rules
Author :
Weidman, T. ; Sugiarto, D. ; Nault, M. ; Mui, D. ; Osborne, Z. ; Lee, C. ; Yang, J.
Author_Institution :
Appl. Mater. Inc., Santa Clara, CA, USA
Abstract :
The CVD photoresist material plasma polymerized methylsilane (PPMS) provides a thin film high resolution imaging layer for 193 nm lithography. Patterned films are readily converted into silicon dioxide hard masks useful for patterning critical device layers with high selectivity. We describe the application of this process for patterning polysilicon gates and new a low /spl kappa/ dielectric material.
Keywords :
photoresists; plasma CVD coatings; polymer films; polymerisation; ultraviolet lithography; 0.18 micron; 193 nm; CVD photoresist; DUV lithography; dielectric constant; dielectric material; plasma polymerized methylsilane; polysilicon gate patterning; silicon dioxide hard mask; thin film high resolution imaging layer; Dielectric thin films; High-resolution imaging; Lithography; Plasma applications; Plasma devices; Plasma materials processing; Polymer films; Process design; Resists; Semiconductor films;
Conference_Titel :
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-4770-6
DOI :
10.1109/VLSIT.1998.689242
