Title :
A low-voltage power MOSFET with a fast-recovery body diode for synchronous rectification
Author :
Rittenhouse, George E. ; Schlecht, Martin F.
Author_Institution :
MicroSyst. Technol. Lab., MIT, Cambridge, MA, USA
Abstract :
A power MOSFET suitable for synchronous rectification in 1-10 MHz switching power supplies is presented. Three device structures are compared to find the lowest on-state resistance, off-state capacitance product. The lightly doped drain region typical of most power MOSFETs is removed to give a body diode with a 1 ns reverse recovery time. Both of these types are needed for efficient operation at high frequencies. Process details and experimental results are also discussed.<>
Keywords :
insulated gate field effect transistors; power transistors; semiconductor diodes; solid-state rectifiers; switched mode power supplies; 1 ns; 1 to 10 MHz; fast-recovery body diode; low-voltage; off-state capacitance; on-state resistance; power MOSFET; switching power supplies; synchronous rectification; Capacitance; Frequency; Immune system; Laboratories; Light emitting diodes; MOSFET circuits; Power MOSFET; Power supplies; Rectifiers; Schottky diodes;
Conference_Titel :
Power Electronics Specialists Conference, 1990. PESC '90 Record., 21st Annual IEEE
Conference_Location :
San Antonio, TX, USA
DOI :
10.1109/PESC.1990.131177
