Title :
A novel resist and post-etch residue removal process using ozonated chemistries
Author :
De Gendt, S. ; Snee, P. ; Cornelissen, I. ; Lux, M. ; Vos, R. ; Mertens, P.W. ; Knotter, D.M. ; Heyns, M.M.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
A novel, environmentally friendly process is successfully applied for the removal of photoresist and organic post-etch residues from silicon surfaces. The moist ozone gasphase process described, greatly increases the organic removal efficiency. Improved performance over traditional processes is due to enhanced reactive ozone availability near the wafer surface. Additionally, OH radical scavengers such as acetic acid chemically enhance the process efficiency even further.
Keywords :
environmental factors; ozone; photoresists; sputter etching; surface cleaning; surface contamination; OH radical scavenger; Si; acetic acid; environmental impact; organic post-etch residue; ozonated chemistry; photoresist; removal process efficiency; silicon surface; wafer cleaning; Artificial intelligence; Chemical technology; Chemistry; Cleaning; Containers; Plasma applications; Polymers; Resists; Scanning electron microscopy; Solvents;
Conference_Titel :
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-4770-6
DOI :
10.1109/VLSIT.1998.689243
