DocumentCode :
3144993
Title :
A novel etch chemistry for low-damage poly-Si gate patterning
Author :
Richter, H.H. ; Aminpur, M.-A. ; Wolff, A. ; Sorge, R. ; Rau, W.-D.
Author_Institution :
Inst. for Semicond. Phys., Frankfurt, Germany
fYear :
1998
fDate :
9-11 June 1998
Firstpage :
172
Lastpage :
173
Abstract :
We have investigated hydrogen iodide (HI) as an alternative to conventional chlorine or bromine silicon etch chemistries. HI plasmas seem to be a promising candidate for anisotropic polysilicon gate etching in VLSI technologies, offering high selectivity to the underlying oxide, no notching and minimal damage. The study shows that a commercially available conventional etch reactor-in combination with an unconventional etch chemistry-is well suited for gate patterning in sub-half micron technologies.
Keywords :
VLSI; elemental semiconductors; integrated circuit technology; silicon; sputter etching; HI; Si; VLSI technology; anisotropic polysilicon gate patterning; damage; hydrogen iodide plasma etch chemistry; selectivity; Anisotropic magnetoresistance; Atomic layer deposition; Atomic measurements; Hydrogen; Plasma applications; Plasma chemistry; Plasma density; Plasma devices; Plasma materials processing; Sputter etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-4770-6
Type :
conf
DOI :
10.1109/VLSIT.1998.689245
Filename :
689245
Link To Document :
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