Title :
An accurate model for power DMOSFETs including interelectrode capacitances
Author :
Scott, R. Steven ; Franz, Gerhard A.
Author_Institution :
General Electric Co., Schenectady, NY, USA
Abstract :
A novel methodology for modeling power MOS devices using a SPICE-compatible subcircuit is proposed. The interelectrode capacitances are modeled accurately as nonlinear functions of the applied biases. Simulations and measured data support the accuracy of the new models. Various second-order effects relating to the gate capacitance model are discussed, and stratagies are presented to include them in the model. The model parameters can be obtained from device measurements. The approach is verified by gate charge measurements over a wide range of applied biases.<>
Keywords :
insulated gate field effect transistors; power transistors; semiconductor device models; SPICE-compatible subcircuit; gate charge measurements; interelectrode capacitances; power DMOSFET; second-order effects; Capacitance; Circuit synthesis; Costs; MOS devices; MOSFETs; Physics; Power system modeling; Research and development; SPICE; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1990. PESC '90 Record., 21st Annual IEEE
Conference_Location :
San Antonio, TX, USA
DOI :
10.1109/PESC.1990.131179
