Title :
Anomalous magnetoresistance and transport properties of itinerant ferromagnet Fe1−xCoxSi
Author :
Yang, T. Ou ; Shu, G. ; Hu, C. ; Chou, F.
Author_Institution :
Phys., NTU, Taipei, Taiwan
Abstract :
In order to enhance the storage density of information in the magnetic storage devices, scientists pay most attention to develop the novel magnetic materials that possessing magnetoresistance (MR). In most of them, the giant magnetoresistance (GMR) has been extensively explored in magnetic memory and logic devices for which the spin degree of freedom dominates the mechanism of manipulation. The major challenge for spintronics is how to enhance the density of spin-polarized currents for transforming information. Half metals are recommended as the best candidates for spin-based electronics, possessing highly spin-polarized electrons. In present work, we have studied the ac susceptibility, the dc magnetization, the MR, and the transport properties with single crystal samples to explore the reliable physical properties.
Keywords :
band model of magnetism; cobalt alloys; ferromagnetic materials; giant magnetoresistance; iron alloys; magnetic susceptibility; magnetisation; silicon alloys; Fe1-xCoxSi; ac susceptibility; anomalous magnetoresistance; dc magnetization; giant magnetoresistance; half metals; highly spin-polarized electrons; information storage density; itinerant ferromagnet; logic devices; magnetic memory; magnetic storage devices; manipulation mechanism; physical properties; single crystal; spin degree of freedom; spin-based electronics; spin-polarized current density; spintronics; transport properties; Compounds; Doping; Magnetic fields; Magnetic properties; Magnetoresistance; Metals; Saturation magnetization;
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
DOI :
10.1109/INTMAG.2015.7157743
