Non-destructive testing by absolute room temperature photoluminescence quantum efficiency of GaAs solar cells

Author

Lee, X.Y. ; Wu, Charles Q. ; Verma, Ashish K. ; Ranganathan, Raghu ; Yablonovitch, Eli

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

fYear

1996

fDate

13-17 May 1996

Firstpage

141

Lastpage

142

Abstract

Nondestructive room temperature photoluminescence (PL) measurements on semiconductors are an important characterization tool to evaluate material quality and study the opto-electronic conversion mechanism involved in devices such as light-emitting diodes, solar cells, etc. In this paper, the authors describe nondestructive PL characterization studies of partially processed GaAs solar cells. Such a tool is valuable in the process development of high performance solar cells

Keywords

III-V semiconductors; gallium arsenide; nondestructive testing; photoluminescence; semiconductor device testing; solar cells; GaAs; absolute room temperature photoluminescence quantum efficiency; characterization tool; nondestructive tests; performance testing; photoluminescence measurements; semiconductor; Calibration; Etching; Gallium arsenide; Nondestructive testing; Optical pumping; Optical scattering; Optical surface waves; Photoluminescence; Photovoltaic cells; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.563967

Filename

563967