DocumentCode :
3145152
Title :
Single-chip integration of electronically switchable bandpass filter for 3.5GHz WiMAX application
Author :
Liao, Wei-Hung ; Chen, Chang-Sheng ; Lin, Yo-Shen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
1368
Lastpage :
1371
Abstract :
This paper demonstrates the design and implementation of a miniaturized bandpass filter integrated with switch function in commercial GaAs pHEMT process for 3.5GHz WiMAX application. A tapped-input, capacitive-loaded hairpin-comb bandpass filter is proposed to benefit from the high-density metal-insulator-metal capacitor in the GaAs process, such that the required electrical length of coupled-line is only 13.3 degree at the center frequency and the filter size can be largely reduced. The proposed integrated bandpass filter features low in-band insertion loss as well as a wide 30-dB rejection-band up to 33.8 GHz. The filter size is only 1.22 mm×0.61 mm, and is realized in a chip size of 1.5 mm×1.0 mm. Then, by adding two D-mode FETs in the pHEMT process, the proposed filter can be switched on and off electronically. Low-loss bandpass response with wide rejection band in the “filter on” state and wideband 35-dB isolation from DC up to 28.7 GHz in the “filter off” state are achieved. The chip size of this switchable bandpass filter is only 2.0 mm×1.0 mm.
Keywords :
HEMT integrated circuits; MIM devices; MMIC; UHF filters; WiMax; band-pass filters; gallium arsenide; microwave filters; microwave switches; D-mode FET; GaAs; WiMAX application; capacitive loaded hairpin comb bandpass filter; electronically switchable bandpass filter; frequency 3.5 GHz; high density metal-insulator-metal capacitor; miniaturized bandpass filter; pHEMT process; single chip integration; size 0.61 mm; size 1 mm; size 1.22 mm; size 1.5 mm; size 2 mm; switch function; Band pass filters; Couplings; FETs; Frequency; Gallium arsenide; Insertion loss; MIM capacitors; PHEMTs; Switches; WiMAX; Bandpass filter; GaAs; capacitive loaded; hairpin; switchable;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5517693
Filename :
5517693
Link To Document :
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