DocumentCode :
3145280
Title :
Magnetic field modulation of chiral tunneling in graphene heterojunctions
Author :
Li, Y. ; Jalil, M.B.
Author_Institution :
Dept. of Phys., Hangzhou Dianzi Univ., Hangzhou, China
fYear :
2015
fDate :
11-15 May 2015
Firstpage :
1
Lastpage :
1
Abstract :
Most studies on the effect of the magnetic field (B-field) on the transport property of graphene have assumed the low-energy approximation represented by the linear Dirac Hamiltonian. Here, we apply the non-equilibrium Green´s function (NEGF) method based on the tight-binding model to analyze the transport characteristic of graphene heterojunctions in the presence of B-field. The NEGF approach also allows us to analyze the transport under biased condition, which pertains to most practical devices.
Keywords :
Green´s function methods; approximation theory; graphene; tight-binding calculations; tunnelling; C; biased condition; chiral tunneling; graphene heterojunctions; graphene transport property; linear Dirac Hamiltonian; low-energy approximation; magnetic field effect; magnetic field modulation; nonequilibrium Green´s function method; tight-binding model; Graphene; Heterojunctions; Logic gates; Magnetic fields; Magnetic properties; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
Type :
conf
DOI :
10.1109/INTMAG.2015.7157754
Filename :
7157754
Link To Document :
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