Title :
Wide center-tape balun for 60 GHz silicon RF ICs
Author :
Meng, Fanyi ; Yeo, Kiat Seng ; Xu, Shanshan ; Ma, Kaixue ; Lim, Chee Chong
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
A monolithic transformer balun has been designed for 60 GHz applications. The balun is implemented based on GLOBALFOUNDRIES 65 nm CMOS process. Simulated amplitude and phase imbalance less than 0.1 dB and 0.34 degrees respectively over the 55-66 GHz frequency band are achieved. Insertion loss is as low as 1.22 dB at 60 GHz. The designed device has advantage of small size, low loss and excellence in output balance.
Keywords :
CMOS integrated circuits; baluns; elemental semiconductors; millimetre wave integrated circuits; silicon; GLOBALFOUNDRIES CMOS process; RFIC; Si; amplitude imbalance; frequency 55 GHz to 66 GHz; monolithic transformer balun; phase imbalance; size 65 nm; wide center-tape balun; 60 GHz; Passive Balun; RFIC design; mm-wave;
Conference_Titel :
SoC Design Conference (ISOCC), 2011 International
Conference_Location :
Jeju
Print_ISBN :
978-1-4577-0709-4
Electronic_ISBN :
978-1-4577-0710-0
DOI :
10.1109/ISOCC.2011.6138635
