Title :
Deuterium process of CMOS devices: new phenomena and dramatic improvement
Author :
Zhi Chen ; Jinju Lee ; Lyding, J.W. ; Hess, K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
When CMOS devices were annealed in D/sub 2/ in instead of H/sub 2/, the slope, n, of the degradation power law is smaller than that for the H/sub 2/ processed devices. At higher process temperature (480/spl deg/C), the power index, n, becomes voltage dependent. This results in dramatic enhancement of life time (over 10/sup 6/ times). 10-30% higher channel electrical field can be applied to the D/sub 2/ annealed devices.
Keywords :
MOSFET; annealing; deuterium; 480 C; CMOS device; D/sub 2/; D/sub 2/ annealing; channel electrical field; degradation power law; deuterium processing; lifetime; power index; Annealing; CMOS process; Degradation; Deuterium; Hot carriers; Hydrogen; MOSFETs; Maintenance; Temperature dependence; Voltage;
Conference_Titel :
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-4770-6
DOI :
10.1109/VLSIT.1998.689248
