DocumentCode :
3145735
Title :
High efficiency push-pull inverse class F power amplifier using a balun and harmonic trap waveform shaping network
Author :
Stameroff, Alexander N. ; Pham, Anh-Vu ; Leoni, Robert E.
Author_Institution :
Univ. of California Davis, Davis, CA, USA
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
521
Lastpage :
525
Abstract :
We present the design and development of a push-pull inverse class F power amplifier in X band using a novel harmonic matching network. The harmonic matching network is realized by a simple, low-loss, Marchand balun and a harmonic trap circuit. This novel harmonic matching network not only provides 3-dB power combining, but also enables waveform shaping for enhanced efficiency. This 1-stage power amplifier using discrete GaAs pHEMTs achieves a measured saturated output power of 33 dBm with a power added efficiency of 63% and a gain of 10 dB. This amplifier operates at 10 GHz with a 6% fractional bandwidth.
Keywords :
differential amplifiers; high electron mobility transistors; power amplifiers; 1-stage power amplifier; Marchand balun; discrete GaAs pHEMT; harmonic matching network; harmonic trap circuit; harmonic trap waveform shaping network; high efficiency push-pull inverse class F power amplifier; Circuits; Gain measurement; Gallium arsenide; High power amplifiers; Impedance matching; PHEMTs; Power amplifiers; Power generation; Power measurement; Power system harmonics; MODFET power amplifiers; Power amplifiers; microwave power amplifiers; power FET amplifiers; power combiners;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5517720
Filename :
5517720
Link To Document :
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