• DocumentCode
    3145735
  • Title

    High efficiency push-pull inverse class F power amplifier using a balun and harmonic trap waveform shaping network

  • Author

    Stameroff, Alexander N. ; Pham, Anh-Vu ; Leoni, Robert E.

  • Author_Institution
    Univ. of California Davis, Davis, CA, USA
  • fYear
    2010
  • fDate
    23-28 May 2010
  • Firstpage
    521
  • Lastpage
    525
  • Abstract
    We present the design and development of a push-pull inverse class F power amplifier in X band using a novel harmonic matching network. The harmonic matching network is realized by a simple, low-loss, Marchand balun and a harmonic trap circuit. This novel harmonic matching network not only provides 3-dB power combining, but also enables waveform shaping for enhanced efficiency. This 1-stage power amplifier using discrete GaAs pHEMTs achieves a measured saturated output power of 33 dBm with a power added efficiency of 63% and a gain of 10 dB. This amplifier operates at 10 GHz with a 6% fractional bandwidth.
  • Keywords
    differential amplifiers; high electron mobility transistors; power amplifiers; 1-stage power amplifier; Marchand balun; discrete GaAs pHEMT; harmonic matching network; harmonic trap circuit; harmonic trap waveform shaping network; high efficiency push-pull inverse class F power amplifier; Circuits; Gain measurement; Gallium arsenide; High power amplifiers; Impedance matching; PHEMTs; Power amplifiers; Power generation; Power measurement; Power system harmonics; MODFET power amplifiers; Power amplifiers; microwave power amplifiers; power FET amplifiers; power combiners;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
  • Conference_Location
    Anaheim, CA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4244-6056-4
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2010.5517720
  • Filename
    5517720