DocumentCode :
3145785
Title :
A 6 bit linear binary RF DAC in 0.25µm SiGe BiCMOS for communication systems
Author :
Khafaji, Mahdi ; Gustat, Hans ; Scheytt, Christoph
Author_Institution :
IHP Microelectron., Frankfurt (Oder), Germany
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
916
Lastpage :
919
Abstract :
This paper presents a circuit technique to improve the frequency domain behavior of the binary weighted digital to analog convertors (DAC). It is shown that by adding a current buffer stage, the effect of one of the major drawbacks in this architecture, the impedance variation in every stage, is reduced. To verify the method, a fully binary 6 bit 20.5 Gsps DAC with 1 W power dissipation and measured SFDR higher than 28.2 dBc up to 6.2 GHz input bandwidth was fabricated. The DAC produces 1 Vpp differential output, and less than 60 ps full scale rise time.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; buffer circuits; digital-analogue conversion; radiofrequency integrated circuits; wide band gap semiconductors; SiGe; SiGe BiCMOS; binary weighted digital to analog convertors; buffer circuits; communication systems; impedance variation; linear binary RF DAC; power 1 W; power dissipation; voltage 1 V; word length 6 bit; Bandwidth; BiCMOS integrated circuits; Converters; Frequency domain analysis; Germanium silicon alloys; Impedance; Power dissipation; Power measurement; Radio frequency; Silicon germanium; BiCMOS integrated circuits; Digital to analog convertor; Nyquist rate DAC; buffer circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5517724
Filename :
5517724
Link To Document :
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