DocumentCode :
3145937
Title :
High-efficiency 400 W power amplifier with dynamic drain voltage control for 6 MHz OFDM signal
Author :
Hiura, Shinsaku ; Sumi, H. ; Takahashi, Hiroki
Author_Institution :
Toshiba Corporation, Corporate Manufacturing Engineering Center, Yokohama, Japan
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
1
Lastpage :
1
Abstract :
In this paper, we present a high-efficiency 400 W PA for a 6 MHz OFDM signal with a 10 dB peak-to-average power ratio (PAPR). To improve the efficiency of the PA at a 10 dB backoff from its saturated output power (PSAT), a dynamic drain voltage control is applied, which supplies two different drain voltages depending on the envelope of the OFDM signal. The PA is fabricated using a 400 W push-pull LDMOS FET for an UHF band. The drain current of a single LDMOS FET is 9.5 A at PSAT. The drain voltages used in the control are set to 40 V and 20 V. Measurement results indicate a power-added efficiency (PAE) in the case of dynamic drain voltage control of 34%, which is 15% higher than PAE at a drain voltage of 40 V. This is the highest output power of a PA with a dynamic drain voltage control to the best of our knowledge.
Keywords :
FETs; Hafnium; High power amplifiers; OFDM; Peak to average power ratio; Power engineering and energy; Power generation; Power measurement; Pulp manufacturing; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5517733
Filename :
5517733
Link To Document :
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