DocumentCode
3146092
Title
RSCE-aware ultra-low-voltage 40-nm CMOS circuits
Author
Wang, Jinn-Shyan ; Chang, Keng-Jui ; Yang, Shu-Yi ; Hsieh, Tsung-Han ; Yeh, Chingwei
Author_Institution
Dept. of Electr. Eng., Chung-Cheng Univ., Chiayi, Taiwan
fYear
2011
fDate
17-18 Nov. 2011
Firstpage
131
Lastpage
134
Abstract
The design techniques of 40-nm CMOS circuits utilizing the reverse short channel effect (RSCE) for ultra-low-voltage (ULV) applications were studied. We proposed methods to deploy RSCE in order to reduce active energy consumption and standby power consumption. Experimental results on 0.3V 64b adders show that the proposed RSCE-aware designs provide a 71% improvement in active energy consumption and a 68% reduction in standby power.
Keywords
CMOS integrated circuits; energy consumption; low-power electronics; RSCE-aware ultra-low-voltage CMOS circuits; energy consumption; reverse short channel effect; size 40 nm; standby power consumption;
fLanguage
English
Publisher
ieee
Conference_Titel
SoC Design Conference (ISOCC), 2011 International
Conference_Location
Jeju
Print_ISBN
978-1-4577-0709-4
Electronic_ISBN
978-1-4577-0710-0
Type
conf
DOI
10.1109/ISOCC.2011.6138664
Filename
6138664
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