Title :
Highly uniform heteroepitaxy of cobalt silicide by using Co-Ti alloy for sub-quarter micron devices
Author :
Iinuma, T. ; Akutsu, H. ; Ohuchi, K. ; Miyashita, K. ; Toyoshima, Y. ; Suguro, K.
Author_Institution :
Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
A new technology of cobalt SALICIDE (Self-ALIgned siliCIDE) process using cobalt-titanium alloy has been developed for sub-quarter micron devices. Extremely flat and epitaxial CoSi/sub 2/ films are successfully grown on a (100) Si substrate. Improved SALICIDE process is not influenced by native oxide on a Si surface. This technology will be very useful for realizing deep sub-quarter micron devices.
Keywords :
cobalt compounds; metallic epitaxial layers; metallisation; 0.25 micron; Co-Ti; CoSi/sub 2/-Si; SALICIDE process; Si(100) substrate; cobalt silicide; cobalt-titanium alloy; epitaxial film; heteroepitaxy; native oxide; self-aligned silicide; sub-quarter micron device; Cobalt alloys; Conductivity; Rough surfaces; Semiconductor films; Silicides; Silicon alloys; Sputtering; Substrates; Surface morphology; Surface roughness;
Conference_Titel :
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-4770-6
DOI :
10.1109/VLSIT.1998.689251
