Title :
Characterization of semiconducting structures by the PWP method
Author :
Holé, Stéphane ; Lewiner, Jacques
Author_Institution :
Lab. Photons et Mater., Paris 6 Univ., Paris, France
Abstract :
The non-destructive electrical characterization of semiconducting structures mainly relies on indirect techniques. Charge information are then obtained by using an electrical model and only well modelled semiconductor materials can be accurately studied. The PWP method has already been shown to deliver measurable signals in the case of semiconducting structures. In this paper an analytical model of the signal is proposed and tested with Schottky and Metal/Insulator/Semiconductor (MIS) structures under various bias voltages.
Keywords :
MIS structures; carrier mobility; PWP method; metal-insulator-semiconductor structures; mobile carriers; pressure wave propagation; semiconducting structures; Analytical models; Charge carrier processes; Electrodes; Electron mobility; Electrostriction; Permittivity; Schottky diodes; Semiconductivity; Semiconductor materials; Voltage;
Conference_Titel :
Electrets, 2008. ISE-13. 13th International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-1850-3
Electronic_ISBN :
978-1-4244-1851-0
DOI :
10.1109/ISE.2008.4813999
