DocumentCode
3146365
Title
High throughput epitaxy of ferroelectric PVDF-TrFE thin films on molecularly ordered PTFE surface for non-volatile polymer memory
Author
Park, Youn Jung ; Kang, Seok Ju ; Lotz, Bernard ; Brinkmann, M. ; Park, Cheolmin
Author_Institution
Dept. of Mater. Sci. & Eng., Yonsei Univ., Seoul, South Korea
fYear
2008
fDate
15-17 Sept. 2008
Abstract
Here we present the formation of PVDF-TrFE thin films epitaxially grown on molecularly ordered PTFE surface by spin coating and subsequent thermal annealing. Nearly single crystalline polymer films were obtained with a axis of PVDF-TrFE crystals aligned parallel to the PTFE surface normal, giving rise to the crystalline lamellae directionally oriented perpendicular to the chain axis of PTFE. Furthermore, the facile formation of uniform single crystal PTFE surface on a metallic substrate in very large area allowed us not only to fabricate arrays of ferroelectric capacitors but also FeFET with the epitaxially grown PVDF-TrFE thin film.
Keywords
ferroelectric materials; ferroelectric thin films; materials preparation; polymer films; random-access storage; spin coating; PVDF-TrFE films; crystalline structure; ferroelectric thin films; molecularly ordered PTFE surface; nonvolatile polymer memory; poly(tetrafluoroethylene); poly(vinylidene fluoride-cotrifluoroethylene); spin coating technique; Annealing; Capacitors; Coatings; Crystallization; Epitaxial growth; Ferroelectric materials; Nonvolatile memory; Polymer films; Substrates; Throughput;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrets, 2008. ISE-13. 13th International Symposium on
Conference_Location
Tokyo
Print_ISBN
978-1-4244-1850-3
Electronic_ISBN
978-1-4244-1851-0
Type
conf
DOI
10.1109/ISE.2008.4814003
Filename
4814003
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