DocumentCode :
3146674
Title :
The barrier height for electron injection/extraction at metal-dielectric interface
Author :
Neagu, E.R. ; Neagu, R.M. ; Dias, C.J. ; Lança, M. Carmo ; Marat-Mendes, J.N.
Author_Institution :
Dept. of Phys., Tech. Univ. of Iasi, Iasi
fYear :
2008
fDate :
15-17 Sept. 2008
Abstract :
We have demonstrated that besides a polarization current there is a current related to charge injection or extraction at the metal-dielectric contact and a reverse current related to the charge trapped into the superficial traps of the dielectric and which can jump at the interface in a reverse way. An analytical expression is proposed for the OCICC and this expression contains as main parameter the height of the potential barrier at the metal-dielectric interface at the initial moment when the step voltage is applied. The value obtained for the potential barrier was 0.43 eV.
Keywords :
charge injection; dielectric polarisation; electrets; metal-insulator boundaries; OCICC; barrier height; charge injection; electron extraction; electron injection; metal-dielectric interface; polarization current; reverse current; step voltage; superficial traps; Current measurement; Dielectric materials; Dielectric measurements; Displacement measurement; Electrodes; Electrons; Isothermal processes; Optical polarization; Physics; Transient analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrets, 2008. ISE-13. 13th International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-1850-3
Electronic_ISBN :
978-1-4244-1851-0
Type :
conf
DOI :
10.1109/ISE.2008.4814018
Filename :
4814018
Link To Document :
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