A 10.3Gbps translmpedance amplifier with mutually coupled inductors in 0.18-μm CMOS

In this paper, a 10.3Gbps transimpedance amplifier (TIA) with mutually coupled inductors is presented. The proposed circuit is fabricated in 0.18μm CMOS and it achieves 10.3Gbps operation in the presence of a 0.25pF photo-diode capacitance. The transimpedance gain is 50dBΩ. The -3dB bandwidth is 5.9GHz, and the group delay dispersion is 10ps over the -3dB bandwidth. The TIA core circuit consumes 4.23mW under 1.8V supply voltage, and occupies an area of 0.12mm². Employing a design for small group delay dispersion, the measured TIA demonstrates the mask margin of 43% at 10.3Gbps operation.