DocumentCode :
3146716
Title :
Development of p/n and n/p thick emitter InP solar cells
Author :
Sharps, P.R. ; Timmons, M.L. ; Messenger, S.R. ; Cotal, H.L. ; Summers, G.P. ; Iles, P.A.
Author_Institution :
Res. Triangle Inst., Research Triangle Park, NC, USA
fYear :
1996
fDate :
13-17 May 1996
Firstpage :
175
Lastpage :
178
Abstract :
Both n/p and p/n InP thick emitter (0.3 μm) space solar cells with and without Ga0.5In0.5P windows are studied. Both polarity cells are considered for possible growth on Ge. While not achieving the high efficiencies of thin emitter InP cells, the thicker emitter cells may provide an advantage in radiation hardness. The Ga0.5In0.5P window has little effect on cell performance, for either polarity
Keywords :
III-V semiconductors; gallium compounds; indium compounds; photovoltaic power systems; semiconductor materials; solar cells; space vehicle power plants; 0.3 mum; Ga0.5In0.5P; Ga0.5In0.5P windows; Ge; Ge substrate; InP; cell performance; n/p InP thick emitter; p/n InP thick emitter; polarity cells; radiation hardness; space solar cells; thick emitter InP solar cells; Degradation; Indium phosphide; Passivation; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Radiative recombination; Solar power generation; Substrates; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
ISSN :
0160-8371
Print_ISBN :
0-7803-3166-4
Type :
conf
DOI :
10.1109/PVSC.1996.563975
Filename :
563975
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3146716
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