Title :
Current density dependence of electromigration t/sub 50/ enhancement due to pulsed operation
Author :
Suehle, John S. ; Schafft, Harry A.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
Two effects that complicate the electromigration characterization of metallization for pulsed stress are discussed. One is the dependence of the t/sub 50/ enhancement (due to pulsed operation) on current density, and the other is a decrease of this enhancement over a range of frequencies (0.2 to 2 MHz) that is connected with the Joule heating. These effects are discussed in terms of changes in the buildup and relaxation response times of the excess vacancy concentrations.<>
Keywords :
aluminium alloys; current density; electromigration; failure analysis; metallisation; silicon alloys; vacancies (crystal); 0.2 to 2 MHz; AlSi; Joule heating; buildup; current density; electromigration; electromigration characterization; excess vacancy concentrations; metallization; pulsed operation; pulsed stress; relaxation response times; t/sub 50/ enhancement; time to failure; Current density; Delay; Electromigration; Frequency; Heating; Metallization; NIST; Pulse circuits; Stress; Testing;
Conference_Titel :
Reliability Physics Symposium, 1990. 28th Annual Proceedings., International
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/RELPHY.1990.66071
