Title :
Influence of RF measurement uncertainties on model uncertainties: practical case of a SiGe HBT
Author :
Schreurs, D. ; Hussain, H. ; Taher, H. ; Nauwelaers, B.
Author_Institution :
Div. ESAT-TELEMIC, Katholieke Univ., Leuven, Belgium
Abstract :
Measurement based models, like small-signal equivalent circuit models of microwave transistors, are often extracted under the assumption of having perfect measurements. In this work we study how the uncertainties of S-parameter measurements affect the uncertainties of model element values in the practical case of a SiGe HBT.
Keywords :
Ge-Si alloys; S-parameters; equivalent circuits; heterojunction bipolar transistors; measurement uncertainty; microwave bipolar transistors; microwave measurement; Ge-Si; RF measurement uncertainties; S-parameter measurements; SiGe HBT; measurement based models; microwave transistors; model element values; model uncertainties; small-signal equivalent circuit models; Computer aided software engineering; Covariance matrix; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Jacobian matrices; Measurement uncertainty; Microwave measurements; Scattering parameters; Silicon germanium;
Conference_Titel :
Microwave Measurements Conference, Fall 2004. 64th ARFTG
Print_ISBN :
0-7803-8952-2
DOI :
10.1109/ARFTGF.2004.1427568
