DocumentCode
3146970
Title
Organic ferroelectric multilayer for programmable logic gate
Author
Ishida, Kenji ; Horie, Satoshi ; Matsushige, Kazumi ; Ueda, Yasukiyo
Author_Institution
Kobe Univ., Kobe
fYear
2008
fDate
15-17 Sept. 2008
Abstract
We demonstrate the operation of programmable logic gates using organic ferroelectrics. The vinylidene fluoride(VDF) oligomer, which is an organic ferroelectric with low molecular weight, was used as organic ferroelectric. Multilayer structure, Al/VDF/Al/VDF/Al, was fabricated on flexible substrate by vacuum deposition. A rectangular polarization hysteresis loop was observed in VDF oligomer thin film of each stacked ferroelectric layer and the switching characteristic evaluated as AND and OR gate by the polarization reversal of the fabricated stacked structure. Therefore, the organic ferroelectric multilayer could treat as programable logic gate by controlling direction of polarization.
Keywords
aluminium; dielectric hysteresis; dielectric polarisation; ferroelectric materials; ferroelectric switching; ferroelectric thin films; logic gates; multilayers; organic compounds; programmable logic devices; vacuum deposition; AND gate; Al; OR gate; fabricated stacked structure; flexible substrate; molecular weight; organic ferroelectric multilayer structure; polarization reversal; programmable logic gate; rectangular polarization hysteresis loop; stacked ferroelectric layer; switching characteristic; vacuum deposition; vinylidene fluoride oligomer thin film; Artificial intelligence; Ferroelectric materials; Hysteresis; Logic gates; Nonhomogeneous media; Polarization; Programmable logic arrays; Programmable logic devices; Substrates; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrets, 2008. ISE-13. 13th International Symposium on
Conference_Location
Tokyo
Print_ISBN
978-1-4244-1850-3
Electronic_ISBN
978-1-4244-1851-0
Type
conf
DOI
10.1109/ISE.2008.4814031
Filename
4814031
Link To Document