DocumentCode
3147029
Title
A new floating active inductor using resistive Feedback Technique
Author
Lai, Qiang-Tao ; Mao, Jun-Fa
Author_Institution
Center for Microwave & RF Technol., Shanghai Jiao Tong Univ., Shanghai, China
fYear
2010
fDate
23-28 May 2010
Firstpage
1748
Lastpage
1751
Abstract
A new floating active inductor is proposed, with resistive feedback technique implemented. Compared to traditional CMOS spiral inductors, the active inductor proposed in this paper can substantially improve its equivalent inductance and quality factor. This resistive feedback floating active inductor was fabricated using the TSMC 0.18 um RF CMOS process, which demonstrates a maximum quality factor of 68 with a 33 nH inductance. The core area of the proposed active floating inductor is only 0.081 mm2 which is one tenth of a traditional spiral inductor. The proposed active inductor also shows more than ten times wide dynamic range and four times higher quality factor compared to conventional floating active inductor circuits.
Keywords
CMOS integrated circuits; Q-factor; feedback; inductors; CMOS spiral inductors; RF CMOS process; equivalent inductance; floating active inductor circuit; quality factor; resistive feedback floating active inductor; resistive feedback technique; Active inductors; CMOS technology; Equivalent circuits; Feedback circuits; Inductance; Q factor; Radio frequency; Resistors; Spirals; Transconductors; CMOS; active inductor; floating; resistive feedback;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location
Anaheim, CA
ISSN
0149-645X
Print_ISBN
978-1-4244-6056-4
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2010.5517785
Filename
5517785
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