Title :
Reliability simulator for interconnect and intermetallic contact electromigration
Author :
Liew, B.K. ; Fang, P. ; Cheung, N.W. ; Hu, C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
A previously developed model for predicting interconnect electromigration time-to-failure under arbitrary current waveforms is shown to be applicable to Al-W intermetallic contacts as well. This model is incorporated in a circuit electromigration reliability simulator which can (1) generate layout advisory for width and length of each interconnect, the safety factor of each contact and via in a circuit to meet user-specified reliability requirements and (2) estimate the overall circuit electromigration failure rate and/or cumulative percent failure.<>
Keywords :
VLSI; aluminium; circuit reliability; digital simulation; electromigration; failure analysis; metallisation; tungsten; Al-W; circuit electromigration reliability simulator; cumulative percent failure; current waveforms; interconnect electromigration time-to-failure; intermetallic contact electromigration; layout advisory; overall circuit electromigration failure rate; user-specified reliability requirements; Aluminum; Circuit simulation; Contacts; Current density; Electromigration; Frequency; Guidelines; Integrated circuit interconnections; Intermetallic; Tungsten;
Conference_Titel :
Reliability Physics Symposium, 1990. 28th Annual Proceedings., International
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/RELPHY.1990.66072
