DocumentCode :
3147214
Title :
The resonant method: an approximate method for extracting the effective parasitic capacitance of a large signal transistor
Author :
Noori, Bash ; Giffin, Lyle
fYear :
2004
fDate :
2-3 Dec. 2004
Firstpage :
101
Lastpage :
111
Abstract :
The paper describes a simplified method for extracting the effective parasitic capacitances of a packaged LDMOS power transistor using simple de-embedded 2-port S-parameter extraction method. A study case is also discussed with the results verified empirically. This method uses three simultaneous equations to solve for the three capacitances most important to the PA designer, namely, the effective output capacitance, Coss, the effective input capacitance, Ciss, and the effective feedback capacitance, Crss.
Keywords :
S-parameters; capacitance; capacitance measurement; equations; equivalent circuits; power MOSFET; LDMOS power transistor; PA designer; S-parameter extraction method; effective feedback capacitance; effective input capacitance; effective output capacitance; effective parasitic capacitance; equivalent circuit model; large signal transistor; parasitic capacitance measurement; resonant method; simultaneous equations; Bandwidth; Circuits; High power amplifiers; Impedance matching; Packaging; Parasitic capacitance; Power transistors; Radio frequency; Resonance; Scattering parameters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Measurements Conference, Fall 2004. 64th ARFTG
Print_ISBN :
0-7803-8952-2
Type :
conf
DOI :
10.1109/ARFTGF.2004.1427578
Filename :
1427578
Link To Document :
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