Title :
Experimental results of GaInP2/GaAs/Ge triple junction cell development for space power systems
Author :
Chiang, P.K. ; Ermer, J.H. ; Nishikawa, W.T. ; Krut, D.D. ; Joslin, D.E. ; Eldredge, J.W. ; Cavicchi, B.T. ; Olson, J.M.
Author_Institution :
Spectrolab Inc., Sylmar, CA, USA
Abstract :
This paper describes the successful demonstration of high efficiency, large area monolithic triple-junction, n-on-p, GaInP2 /GaAs/Ge cells. The highest cell efficiency (cell size: 2 cm×2 cm) measured to date is 25.7%, under 1 sun, AM0 illumination. A very uniform distribution of cell efficiency across a 3" diameter wafer is also achieved. The average efficiency of 164, 2 cm×2 cm triple junction cells and 52 cell-interconnect-cover (CIC) assemblies are 22.6% and 21.9%, respectively. The results of temperature coefficient, 1 MeV electron irradiation and thermal cycle measurements (for CICs) are also reported
Keywords :
III-V semiconductors; electron beam effects; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; p-n heterojunctions; photovoltaic power systems; semiconductor materials; solar cells; space vehicle power plants; temperature measurement; 1 MeV; 1 sun AM0 illumination; 2 cm; 21.9 percent; 22.6 percent; 25.7 percent; 3 in; GaInP2-GaAs-Ge; GaInP2/GaAs/Ge triple junction cell; cell efficiency; cell-interconnect-cover assemblies; electron irradiation; monolithic triple-junction solar cells; n-on-p, GaInP2/GaAs/Ge cells; space power systems; temperature coefficient; thermal cycle measurements; Electrons; Gallium arsenide; Inductors; Laboratories; Lighting; Power systems; Production; Size measurement; Sun; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.563977
