Charge transport properties and memory effects in organic thin-film transistors using polymeric dielectrics

In this paper, a high performance tiny grain polycrystalline pentacene OTFT were produced by introducing a polymethylmethacrylate (PMMA) insulator as a gate dielectric modification layer. A typical bottom gate configuration with a silver top contact OTFT to study the electrical characteristics, charge transport properties, and the hysteresis or memory effects in the current-voltage characteristics is used. For comparison, the pentacene OTFTs using silicon dioxide (SiO₂) as gate dielectrics, including three kinds of SiO₂ (denoted as SiOl, SiO₂, and SiO₃) is also fabricated .