Title :
Impact of hot-hole injection on the characteristics of High-Voltage MOS transistors
Author :
Chen, Jone F. ; Lee, J.R. ; Wu, Kuo-Ming ; Liu, C.M.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
Abstract :
High-voltage (HV) devices such as Double Diffused Drain MOS (DDDMOS) transistors are integrated with submicron CMOS integrated circuit in power management ICs. Recently, hot-carrier reliability of HV MOS transistors has attracted wide attention. This paper presents the effect of n-type double diffusion (NDD) implant dosages on hot-carrier reliability of DDDMOS transistors.
Keywords :
CMOS integrated circuits; MOSFET; charge injection; hot carriers; power integrated circuits; reliability; DDDMOS transistors; NDD; double diffused drain MOS transistors; high-voltage MOS transistors; hot-carrier reliability; hot-hole injection; n-type double diffusion implant dosages; power management IC; submicron CMOS integrated circuit; Degradation; Electron traps; Hot carriers; Impact ionization; Implants; Integrated circuit reliability; Land surface temperature; MOSFETs; Microelectronics; Stress measurement;
Conference_Titel :
Electrets, 2008. ISE-13. 13th International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-1850-3
Electronic_ISBN :
978-1-4244-1851-0
DOI :
10.1109/ISE.2008.4814056
