Title :
Production experience with large area, dual junction space cells
Author :
Yeh, Y.C.M. ; Chu, C.L. ; Krogen, J. ; Ho, F.F. ; Datum, G.C. ; Billets, S. ; Olson, J.M. ; Timmons, M.L.
Author_Institution :
TECSTAR Inc., City of Industry, CA, USA
Abstract :
Dual junction (DJ) space cells, comprising GaInP/GaAs cells grown by MOCVD on Ge substrates, are now in production. A conservative DJ cell design (efficiency around 22% AM0) was specified. The paper surveys the development phase, and the production scale-up. Details of current DJ cell performance are included
Keywords :
CVD coatings; III-V semiconductors; gallium arsenide; indium compounds; p-n heterojunctions; photovoltaic power systems; semiconductor growth; solar cells; space vehicle power plants; 22 percent; AM0 efficiency; GaInP-GaAs; GaInP/GaAs solar cells; Ge; Ge substrates; MOCVD; development phase; dual junction space solar cells; process control; production phase; Billets; Cities and towns; Costs; Gallium arsenide; Inductors; Manufacturing; Production; Renewable energy resources; Temperature; Testing;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.563978
