Title :
Intrinsically switchable interdigitated barium titanate thin film contour mode resonators
Author :
Lee, Victor ; Sis, Seyit A. ; Zhu, Xinen ; Mortazawi, Amir
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
This paper presents the design and measurement results of an intrinsically switchable interdigitated contour mode resonator based on barium titanate (BTO) thin films. The device exhibits quality factors of 178 and 152 at series and parallel resonance frequencies of 1.67 and 1.68 GHz, respectively, with the application of a 10 V dc bias. Resonances are turned off without the application of dc bias. This is the first demonstration of an intrinsically switchable interdigitated ferroelectric contour mode resonator.
Keywords :
barium compounds; resonators; thin film devices; barium titanate thin films; frequency 1.67 GHz; frequency 1.68 GHz; intrinsically switchable interdigitated contour mode resonator; intrinsically switchable interdigitated ferroelectric contour mode resonator; voltage 10 V; Barium; Communication switching; Film bulk acoustic resonators; Radio frequency; Resonance; Resonant frequency; Resonator filters; Switches; Titanium compounds; Transistors; Barium titanate; ferroelectric devices; interdigitated contour mode resonators; intrinsically switchable; radio-frequency (RF) microelectromechanical systems (MEMS);
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5517816
