Intrinsically switchable interdigitated barium titanate thin film contour mode resonators

Author

Lee, Victor ; Sis, Seyit A. ; Zhu, Xinen ; Mortazawi, Amir

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA

fYear

2010

fDate

23-28 May 2010

Firstpage

1448

Lastpage

1450

Abstract

This paper presents the design and measurement results of an intrinsically switchable interdigitated contour mode resonator based on barium titanate (BTO) thin films. The device exhibits quality factors of 178 and 152 at series and parallel resonance frequencies of 1.67 and 1.68 GHz, respectively, with the application of a 10 V dc bias. Resonances are turned off without the application of dc bias. This is the first demonstration of an intrinsically switchable interdigitated ferroelectric contour mode resonator.

Keywords

barium compounds; resonators; thin film devices; barium titanate thin films; frequency 1.67 GHz; frequency 1.68 GHz; intrinsically switchable interdigitated contour mode resonator; intrinsically switchable interdigitated ferroelectric contour mode resonator; voltage 10 V; Barium; Communication switching; Film bulk acoustic resonators; Radio frequency; Resonance; Resonant frequency; Resonator filters; Switches; Titanium compounds; Transistors; Barium titanate; ferroelectric devices; interdigitated contour mode resonators; intrinsically switchable; radio-frequency (RF) microelectromechanical systems (MEMS);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Conference_Location

Anaheim, CA

ISSN

0149-645X

Print_ISBN

978-1-4244-6056-4

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2010.5517816

Filename

5517816