Title :
Trench transformation technology using hydrogen annealing for realizing highly reliable device structure with thin dielectric films
Author :
Sato, T. ; Mizushima, I. ; Iba, J. ; Kito, M. ; Takegawa, Y. ; Sudo, A. ; Tsunashima, Y.
Author_Institution :
Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
The shape and the surface morphology of the trench structure was successfully transformed by the annealing in hydrogen ambient. The corner was rounded and the surface morphology was smoothened on the inside of the trench. Electrical characteristics of the thin oxide grown in the deep trench capacitor were drastically improved. The hydrogen annealing condition was optimized based on the transformation mechanism.
Keywords :
annealing; capacitors; dielectric thin films; isolation technology; reliability; deep trench capacitor; device reliability; dielectric thin film; electrical characteristics; hydrogen annealing; oxide growth; surface morphology; trench transformation technology; Annealing; Capacitors; Electrodes; Error analysis; Etching; Hydrogen; Platinum; Random access memory; Shape; Surface morphology;
Conference_Titel :
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-4770-6
DOI :
10.1109/VLSIT.1998.689258
