The Semi-Conductor Optical Switch on a Base of Field Transistor

Author

Aripov, Kh.K. ; Yodgorova, D.M. ; Karimov, A.V. ; Yuldashev, Sh.Sh. ; Nurmukhamedov, B.Z.

Author_Institution

Phys.-Tech. Inst. of the Sci. Assoc., Acad. of Sci. of the Republic of Uzbekistan, Tashkent

fYear

2006

fDate

19-21 Sept. 2006

Firstpage

1

Lastpage

2

Abstract

In the present work the results of research of some opportunities of the field phototransistor as optical switch are resulted. The field phototransistor, used for this purpose, represents arsenide gallium structure of flat design with the bottom manager p-n-junction in quality gate. The mode of operations of the device with switching from one status in another requires a choice working load straight line so that it crossed the target characteristic of the field phototransistor constructed on measurements of the voltage-current characteristics at two various illuminations at least, in two points appropriate to steady statuses.

Keywords

III-V semiconductors; arsenic compounds; integrated optoelectronics; optical switches; p-n junctions; phototransistors; semiconductor switches; AsGa; arsenide gallium structure; device mode-of-operation; field phototransistor; p-n-junction; semiconductor optical switch; voltage-current characteristics; Circuits; Light emitting diodes; Lighting; Optical bistability; Optical devices; Optical interconnections; Optical modulation; Optical switches; Phototransistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Internet, 2006 2nd IEEE/IFIP International Conference in Central Asia on

Conference_Location

Tashkent

Print_ISBN

1-4244-0543-2

Electronic_ISBN

1-4244-0543-2

Type

conf

DOI

10.1109/CANET.2006.279274

Filename

4055206