Title :
The Semi-Conductor Optical Switch on a Base of Field Transistor
Author :
Aripov, Kh.K. ; Yodgorova, D.M. ; Karimov, A.V. ; Yuldashev, Sh.Sh. ; Nurmukhamedov, B.Z.
Author_Institution :
Phys.-Tech. Inst. of the Sci. Assoc., Acad. of Sci. of the Republic of Uzbekistan, Tashkent
Abstract :
In the present work the results of research of some opportunities of the field phototransistor as optical switch are resulted. The field phototransistor, used for this purpose, represents arsenide gallium structure of flat design with the bottom manager p-n-junction in quality gate. The mode of operations of the device with switching from one status in another requires a choice working load straight line so that it crossed the target characteristic of the field phototransistor constructed on measurements of the voltage-current characteristics at two various illuminations at least, in two points appropriate to steady statuses.
Keywords :
III-V semiconductors; arsenic compounds; integrated optoelectronics; optical switches; p-n junctions; phototransistors; semiconductor switches; AsGa; arsenide gallium structure; device mode-of-operation; field phototransistor; p-n-junction; semiconductor optical switch; voltage-current characteristics; Circuits; Light emitting diodes; Lighting; Optical bistability; Optical devices; Optical interconnections; Optical modulation; Optical switches; Phototransistors; Voltage;
Conference_Titel :
Internet, 2006 2nd IEEE/IFIP International Conference in Central Asia on
Conference_Location :
Tashkent
Print_ISBN :
1-4244-0543-2
Electronic_ISBN :
1-4244-0543-2
DOI :
10.1109/CANET.2006.279274
