Title :
Distributed amplifiers in InP DHBT for 100-Gbit/s operation
Author :
dupuy, J.Y. ; Konczykowska, Agnieszka ; Jorge, Filipe ; Riet, M. ; Godin, J.
Author_Institution :
Alcatel-Lucent, Marcoussis, France
Abstract :
Two single-ended distributed amplifiers were designed and fabricated using a 0.7-µm InP double heterojunction bipolar transistor (DHBT) technology. The first amplifier´s gain and bandwidth are respectively around 15 dB and 90 GHz. The second amplifier´s gain and bandwidth are respectively higher than 13 dB and 110 GHz. Eye diagram measurements were performed at 86 Gbit/s showing clear eye opening and large output swing, respectively as high as 2.7 Vpp and 2.4 Vpp, for the first and second amplifier. These distributed amplifiers are well suited for a use as modulator drivers for 100 Gbit/s optical communication systems.
Keywords :
Bandwidth; Circuits; DH-HEMTs; Distributed amplifiers; Indium phosphide; Optical amplifiers; Optical fiber communication; Optical signal processing; Photonics; Wireless communication;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5517837
