Title :
Multiple upset in memories & their impact on error predictions and subsystem designs
Author :
Stassinopoulos, E.G. ; Brucker, G.J.
Author_Institution :
NASA/Goddard Space Flight Center, Greenbelt, MD, USA
Abstract :
The occurrence of multiple upset errors during ground tests can contaminate the data and lead to error cross sections which are too high. In space, multiple errors may produce higher upsets than predicted and if they occur in single words they can defeat error-detection-and-correction hardware. This investigation involves data which were taken during an experimental study of dose imprint effects in static memories. The results show that multiple errors occurred mainly for heavy ions with high LETs and with the majority of these in the soft upset sections of the dose-imprinted memory samples. The percentages of the total number of errors which were singlets, doublets, and triplets, were determined as a function of LET, dose, and soft or hard section of the devices. The experimental observations are compared to predictions of simple binomial statistics
Keywords :
CMOS integrated circuits; SRAM chips; integrated circuit testing; ion beam effects; 1×106 rad; 2×105 rad; 300 K; 5×105 rad; 77 K; CMOS SRAM; binomial statistics; dose imprint effects; error predictions; heavy ions; multiple upset errors; soft upset sections; space upset predictions; static memories; subsystem designs; Annealing; Displays; Electronic equipment testing; Gold; Laboratories; Random access memory; Read-write memory;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213545
