Title :
Thermally stimulated depolarization currents in Bi6Pb2O11
Author :
Anisimova, N.I. ; Bordovsky, G.A. ; Bordovsky, V.A. ; Castro, R.A.
Author_Institution :
Coll. of Phys., Herzen State Pedagogical Univ. of Russia, St. Petersburg
Abstract :
The present paper reports on the investigation of local states in Bi6Pb2O11 band gap, which control charge carrier transport properties of this compound. Method of thermally stimulated depolarization currents (TSD) was used. The TSD curves are formed by 2-3 peaks at 246, 324 and 340 K. The number of peaks and their resolution depend greatly on polarization conditions (polarization field Ep and temperature of polarization Tp). The established residual polarization is due to hetero-charge formed, if only values of Ep do not exceed 5.10 V/m.
Keywords :
bismuth compounds; energy gap; ionic conductivity; localised states; thermally stimulated currents; Bi6Pb2O11; band gap; charge carrier transport; local states; temperature 246 K; temperature 324 K; temperature 340 K; thermally stimulated depolarization currents; Bismuth; Charge carriers; Conductivity; Educational institutions; Metastasis; Physics; Polarization; Temperature control; Temperature dependence; Temperature distribution;
Conference_Titel :
Electrets, 2008. ISE-13. 13th International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-1850-3
Electronic_ISBN :
978-1-4244-1851-0
DOI :
10.1109/ISE.2008.4814105
