Title :
Radiation effects on CCD
Author :
Cluzel, J. ; Guiga, A. ; Tronel, R. ; Vilain, M. ; Vie, M. ; Azais, B. ; Baboulet, JP
Author_Institution :
LETI/DOPT/ CENG, Grenoble, France
Abstract :
Silicon Charge Couple Devices are the main components for visible and infrared imaging. The behaviour of these components has been studied under photon radiations (total dose and dose rate radiations) and neutron radiation. Infrared readout circuits have been tested in storage condition at 300 K and in operating condition at 77 K. The different simulation facilities, test facilities and main results are presented. This evaluation is the first step to hardening
Keywords :
CCD image sensors; X-ray effects; infrared imaging; neutron effects; radiation hardening (electronics); 300 K; 77 K; CCD imagers; IR readout circuits; Si devices; dose rate radiations; hardening; infrared imaging; neutron radiation; photon radiations; radiation effects; simulation facilities; storage condition; test facilities; total dose; visible imaging; Charge coupled devices; Circuit simulation; Circuit testing; Coupling circuits; Infrared imaging; Neutrons; Radiation effects; Radiation hardening; Silicon; Test facilities;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213575
