DocumentCode :
3148850
Title :
Cumulated dose long term effects in charge coupled devices
Author :
Herve, D. ; Lefesvre, I. ; Dupont-Nivet, E.
Author_Institution :
CEA, BP Bruyeres-le-Chatel, France
fYear :
1991
fDate :
9-12 Sep 1991
Firstpage :
343
Lastpage :
347
Abstract :
Dark current postirradiation evolution in Charge Coupled Devices (CCD) has been experimentally studied versus time and temperature. Early work shows that this current still increases after irradiation over thousands of hours at 300 K. Raising the temperature tends to increase or decrease the dark current, depending on postirradiation experimental conditions. The results can be interpreted, either considering the interface states density, or using the dependence of generation rate on surface potential. The authors show that thermal activation in irradiation tests must be used only after a critical analysis of physical mechanisms and device structure
Keywords :
CCD image sensors; annealing; electron traps; integrated circuit testing; interface electron states; radiation effects; surface potential; 300 K; CCD imager; charge coupled devices; cumulated dose long term effects; dark current postirradiation evolution; generation rate; interface states density; irradiation tests; surface potential; thermal activation; Annealing; Charge coupled devices; Charge-coupled image sensors; Current measurement; Dark current; Image sensors; Interface states; Temperature dependence; Temperature sensors; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
Type :
conf
DOI :
10.1109/RADECS.1991.213578
Filename :
213578
Link To Document :
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