Nitrogen concentration optimization for down-scaled CMOSFET with N/sub 2/O-based oxynitride process

Author

Okayama, Y. ; Kasai, K. ; Yamaguchi, T. ; Ooishi, A. ; Takayanagi-Takagi, M. ; Matsuoka, F. ; Kinugawa, M.

Author_Institution

ULSI Device Eng. Lab., Toshiba Corp., Yokohama, Japan

fYear

1998

fDate

9-11 June 1998

Firstpage

220

Lastpage

221

Abstract

The characteristics of dual gate CMOSFETs with oxynitride gas dielectrics were studied, and the optimization for nitrogen concentration (C/sub N/) in oxynitride film was systematically carried out. It was clarified that the required C/sub N/ for suppressing boron penetration in pMOSFET can be drastically decreased by using BC as a gate dopant instead of BF/sub 2//sup +/. Furthermore, it was found that the introduction of excess nitrogen results in the unique behaviour of short channel characteristics degradation in nMOSFET for the first time, and it becomes one of the limiting factor for nMOSFET miniaturization.

Keywords

CMOS integrated circuits; MOSFET; nitridation; oxidation; N/sub 2/ concentration optimization; N/sub 2/O-based oxynitride process; Si-SiON; down-scaled CMOSFET; dual gate CMOSFETs; miniaturization; oxynitride gas dielectrics; Boron; CMOSFETs; Degradation; Dielectric films; Doping; Interface states; Laboratories; MOSFET circuits; Nitrogen; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-4770-6

Type

conf

DOI

10.1109/VLSIT.1998.689264

Filename

689264