Tunable BaxSr1−xTiO3 FBARs based on SiO2/W Bragg reflectors

Author

Vorobiev, A. ; Gevorgian, S.

Author_Institution

Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Gothenburg, Sweden

fYear

2010

fDate

23-28 May 2010

Firstpage

1444

Lastpage

1447

Abstract

Experimental performance of tunable Film Bulk Acoustic Wave Resonators (FBAR) using paraelectric phase Ba_xSr_1-xTiO₃ (BSTO) thin films is reported. It is shown that the SiO₂/W based Bragg reflectors deposited on high resistivity substrates withstand relatively high deposition temperatures (<; 600C) of the ferroelectric films without defects and delamination. Tunable FBARs with Qf products more than 1000 are demonstrated experimentally. Potentials of increasing the Q-factor and tunability are considered.

Keywords

acoustic resonators; barium compounds; ferroelectric thin films; silicon compounds; strontium compounds; titanium compounds; tungsten; Ba_xSr_1-xTiO₃; Bragg reflectors; Q-factor; SiO₂-W; ferroelectric films; high resistivity substrates; paraelectric phase thin films; tunable film bulk acoustic wave resonators; Acoustic waves; Conductivity; Delamination; Ferroelectric films; Film bulk acoustic resonators; Optical films; Strontium; Substrates; Temperature; Transistors; Ferroelectric; tunable FBAR;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Conference_Location

Anaheim, CA

ISSN

0149-645X

Print_ISBN

978-1-4244-6056-4

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2010.5517889

Filename

5517889