DocumentCode :
3149188
Title :
Tunable BaxSr1−xTiO3 FBARs based on SiO2/W Bragg reflectors
Author :
Vorobiev, A. ; Gevorgian, S.
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Gothenburg, Sweden
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
1444
Lastpage :
1447
Abstract :
Experimental performance of tunable Film Bulk Acoustic Wave Resonators (FBAR) using paraelectric phase BaxSr1-xTiO3 (BSTO) thin films is reported. It is shown that the SiO2/W based Bragg reflectors deposited on high resistivity substrates withstand relatively high deposition temperatures (<; 600C) of the ferroelectric films without defects and delamination. Tunable FBARs with Qf products more than 1000 are demonstrated experimentally. Potentials of increasing the Q-factor and tunability are considered.
Keywords :
acoustic resonators; barium compounds; ferroelectric thin films; silicon compounds; strontium compounds; titanium compounds; tungsten; BaxSr1-xTiO3; Bragg reflectors; Q-factor; SiO2-W; ferroelectric films; high resistivity substrates; paraelectric phase thin films; tunable film bulk acoustic wave resonators; Acoustic waves; Conductivity; Delamination; Ferroelectric films; Film bulk acoustic resonators; Optical films; Strontium; Substrates; Temperature; Transistors; Ferroelectric; tunable FBAR;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5517889
Filename :
5517889
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3149188
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