Title :
Solutions to heavy ion induced avalanche burnout in power devices
Author :
Wrobel, T.E. ; Beutler, D.E.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
Reviews of normal breakdown and current induced avalanche breakdown mechanisms in silicon power transistors are presented. The authors show the applicability of the current induced avalanche model to heavy ion induced burnouts and present solutions to current induced avalanche in silicon power semiconductors
Keywords :
elemental semiconductors; impact ionisation; ion beam effects; power transistors; reliability; semiconductor device models; silicon; Si; avalanche model; current induced avalanche breakdown mechanisms; heavy ion induced avalanche burnout; normal breakdown; power devices; power transistors; Avalanche breakdown; Charge carrier processes; Charge carriers; Electric breakdown; Electrons; Laboratories; MOSFETs; Power transistors; Silicon; Voltage;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213594
