DocumentCode
3149189
Title
Solutions to heavy ion induced avalanche burnout in power devices
Author
Wrobel, T.E. ; Beutler, D.E.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
fYear
1991
fDate
9-12 Sep 1991
Firstpage
133
Lastpage
137
Abstract
Reviews of normal breakdown and current induced avalanche breakdown mechanisms in silicon power transistors are presented. The authors show the applicability of the current induced avalanche model to heavy ion induced burnouts and present solutions to current induced avalanche in silicon power semiconductors
Keywords
elemental semiconductors; impact ionisation; ion beam effects; power transistors; reliability; semiconductor device models; silicon; Si; avalanche model; current induced avalanche breakdown mechanisms; heavy ion induced avalanche burnout; normal breakdown; power devices; power transistors; Avalanche breakdown; Charge carrier processes; Charge carriers; Electric breakdown; Electrons; Laboratories; MOSFETs; Power transistors; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location
La Grande-Motte
Print_ISBN
0-7803-0208-7
Type
conf
DOI
10.1109/RADECS.1991.213594
Filename
213594
Link To Document