DocumentCode
3149210
Title
Radiation-induced effects on special super large n-channel power MOSFETS for space applications
Author
Joseph, Haskel M.
Author_Institution
Rockwell International, Canoga Park, CA, USA
fYear
1991
fDate
9-12 Sep 1991
Firstpage
128
Lastpage
132
Abstract
Outlines the design, manufacture, and special processing techniques used to attain a solution to radiation-induced effects on super large N-channel power MOSFET dies, sizes 9 and 11, which are approximately 500×690 mils and 772×1022 mils, and still meet the critical and unique requirements of the remote power controller (RPC), the remote bus isolator (RBI), and, above all, the DC-to-DC converter (DDCU) for Space Station Freedom
Keywords
insulated gate field effect transistors; power convertors; power electronics; power transistors; radiation effects; DC/DC convertor; Space Station Freedom; design; manufacture; n-channel power MOSFETS; processing techniques; radiation-induced effects; remote bus isolator; remote power controller; space applications; Circuits; Ionizing radiation; MOSFETs; Radiation hardening; Single event upset; Space stations; Space technology; Testing; Thermal resistance; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location
La Grande-Motte
Print_ISBN
0-7803-0208-7
Type
conf
DOI
10.1109/RADECS.1991.213595
Filename
213595
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