DocumentCode
3149249
Title
Gamma-radiation-induced inversion-layer hole mobility degradation in p-channel power MOSFETs at 300 K and 77 K
Author
Zupac, D. ; Galloway, K.F. ; Schrimpf, R.D.
Author_Institution
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
fYear
1991
fDate
9-12 Sep 1991
Firstpage
121
Lastpage
127
Abstract
The effects of radiation-induced interfacial charges on the inversion-layer hole mobility in p-channel power MOSFETs at room temperature and 77 K are investigated. The mobility degradation is more pronounced at 77 K than at room temperature due to an increased importance of Coulomb scattering from interfacial charges when the phonon scattering is reduced. The radiation-induced mobility degradation is primarily due to interface traps
Keywords
carrier mobility; gamma-ray effects; hole traps; insulated gate field effect transistors; inversion layers; power transistors; 300 K; 77 K; Coulomb scattering; gamma radiation effects; interface traps; inversion-layer hole mobility degradation; p-channel power MOSFETs; phonon scattering; radiation-induced interfacial charges; Cryogenics; Degradation; Electric variables measurement; Ionizing radiation; MOSFETs; Phonons; Scattering; Telephony; Temperature; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location
La Grande-Motte
Print_ISBN
0-7803-0208-7
Type
conf
DOI
10.1109/RADECS.1991.213596
Filename
213596
Link To Document