Title :
Electronic component preview of low dose rate behaviour
Author :
David, J.P. ; Barillot, C.
Author_Institution :
Office National d´´Etudes et de Recherches Aerospatiale, Toulouse, France
Abstract :
Evaluates Texas Instruments HCMOS devices under total dose irradiation, for space application. Parameter degradations for a dose rate of 8 krad/h. are presented. Post-irradiation effects, at 293 K, have been followed for all devices for about one year. Annealing is observed and its kinetics is described. For parameters without any annealing at room temperature, a thermal annealing has been performed with a TSC like method. Finally, dose rate effects are presented in discussion of total dose simulation procedures
Keywords :
CMOS integrated circuits; annealing; radiation effects; 293 K; HCMOS devices; Texas Instruments; annealing; dose rate; low dose rate behaviour; parameter degradations; post-irradiation effects; space application; total dose irradiation; total dose simulation; Annealing; Circuit simulation; Electronic components; Ionizing radiation; Kinetic theory; MOSFETs; Temperature; Testing; Thermal degradation; Voltage;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213598
