Title :
Semi-permanent effects induced by an ionising pulse in a MOS structure: experimental and theoretical study
Author :
Peyre, D. ; Poirot, P. ; Gaillard, R.
Author_Institution :
Nucletudes, Les Ulis, France
Abstract :
Presents an experimental and theoretical study of semi-permanent effects induced by an ionizing radiation pulse in a MOS transistor. Threshold voltage variation with time is studied for different applied gate bias voltages
Keywords :
insulated gate field effect transistors; radiation effects; semiconductor device testing; MOS structure; MOS transistor; applied gate bias voltages; ionising pulse; semi-permanent effects; threshold voltage variation; Electric variables; Electron beams; MOS capacitors; MOSFETs; Pulse measurements; Space charge; Threshold voltage; Time measurement; Timing; Voltage measurement;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213599
