DocumentCode
3149295
Title
Semi-permanent effects induced by an ionising pulse in a MOS structure: experimental and theoretical study
Author
Peyre, D. ; Poirot, P. ; Gaillard, R.
Author_Institution
Nucletudes, Les Ulis, France
fYear
1991
fDate
9-12 Sep 1991
Firstpage
103
Lastpage
107
Abstract
Presents an experimental and theoretical study of semi-permanent effects induced by an ionizing radiation pulse in a MOS transistor. Threshold voltage variation with time is studied for different applied gate bias voltages
Keywords
insulated gate field effect transistors; radiation effects; semiconductor device testing; MOS structure; MOS transistor; applied gate bias voltages; ionising pulse; semi-permanent effects; threshold voltage variation; Electric variables; Electron beams; MOS capacitors; MOSFETs; Pulse measurements; Space charge; Threshold voltage; Time measurement; Timing; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location
La Grande-Motte
Print_ISBN
0-7803-0208-7
Type
conf
DOI
10.1109/RADECS.1991.213599
Filename
213599
Link To Document